Chip company will ring zone in manufacturing "LED TAIWAN 2016" power components, exhibited Wide Bandgap Semiconductor devices (Wide Bandgap Semiconductor Device), the latest research and development of the key materials.

Ring chip for the top six major semiconductor silicon wafer materials suppliers, has always been actively deep tillage implements prospective of substrate material, the special exhibition, will appear a complete ring of wide bandgap semiconductor chip is committed to development the key materials, in product development and technical advance of the power semiconductors.

In the exhibition, ring chip will depend on the application of power device power, respectively on the silicon (Si), gallium nitride (GaN) and silicon carbide (SiC) products. Silicon products will display "3 ~ 12" wafer, chip includes lei, annealing, various and SOI; Gallium nitride product will display 6 ", 8 "Crack Free GaN/Si; And silicon carbide products will display crystal ball and double chip. And will show that the key of the power semiconductor market demand materials, technologies and products and related information.

In addition, the ring chip operations and research and development, deputy general manager of Dr Wen-chin hsu, on April 13, 13:30 on power device innovation technology briefing, published "the key to the wide bandgap semiconductor material", the theme of the speech will focus on the key material of wide bandgap semiconductor components, technical discussions, product applications, and introduces ring chip application in the whole domain of power semiconductor product layout and market position.