Samsung 5 announced officially the world's first mass production by 10 nm process DDR4 DRAM grain production, accelerate the speed of moving towards more sophisticated semiconductor market 10 nm process technology, production since 2014, the first quantity is 20 nm process DDR3 memory particles, become the industry's leading.

Samsung latest start mass production of 10 nm process 8 gb DDR4 DRAM grain support 3200 MBPS data transmission frequency, relative 20 nm process DDR4 DRAM grain performance by about 20%, at the same time, its power consumption can reduce 10% to 20%, the characteristics of high efficiency low energy is applicable to a new generation of HPC (high performance computing), a large corporate network or mainstream computer and server market.

According to the Samsung, 10 nm process DDR4 RAM to overcome a number of technical challenges, including the unique unit design, four heavy exposure (QPT), thin dielectric layer deposition technology, etc., and can continue to use the existing lithography (photolithography), makes the production cost and efficiency are positive benefit.