Intel in the past few years, although in the field of desktop still have a "invincible is how empty days," but around more and more topics to discuss its chip manufacturing technology, especially with many people began to be known as the chip manufacturers, such as Taiwan chipmakers TSMC.

The beginning of many topics to discuss, are based on each time the chipmaker Intel upgrade of manufacturing process. Initially, TSMC and samsung made it clear that will with the fastest speed of transition from "nano" 14/16 "nano", and will focus on developing call "FinFET structure of transistor devices, focused on new technology of chip area will be greatly reduced, compared with traditional fit each generation technology process.

On the other hand, in the midst of the Intel is 22 nm process technology to the 14 nm transition, and Intel also mastered the second-generation FinFET (Tri - Gate) device technology. However, Intel's action is too slow, lead to samsung and TSMC their provocations, according to its leading Intel nano has 16 and 14, but Intel is still not completely out of 22 nm technological process, and it has been proved that TSMC 20 nanometers transistor density is higher than Intel's 22 nm.

Intel 14 nm process too much stronger than the TSMC But the leading edge

Intel's transition from 22 nm to 14 nm time too long, this is not fake, and Intel also realized, in the process of technological process technology synchronous development, transistor density competition is important. In fact, in the face of the folk and even the industry widely talked about misleading topic, Intel does not make any response painstakingly, but when Intel formally announced his 14 nanotechnology, truly determine the unshakable leader.

Intel 14 nm process too much stronger than the TSMC But the leading edge

From the perspective of the figure of the Intel, Intel admit their 32 nm than 28 nm process, mainly is refers to the grid and grid spacing between the former than the latter. To 22 nm, compared with that of 20 nanometers results as well. However, you are at 14 and 16 nano technology nodes, only more than the rest of the competition, establish the leading position.

Therefore, samsung and TSMC said is true, these two more and more excellent foundry in the age of 20 nm process really ahead of Intel's 22 nm. But there is no denying that Intel's new generation of 14 nm, transistor density of at least 14/16 of the advantage over other competitors on nanometer technology nodes.

Process is one thing, and that the actual performance of the transistor?

Over the years, never give up any Intel boasts about his chip technology, only after TSMC and samsung superior convergence a lot. And valuable Intel is not excessive to publicize their second generation FinFET process, after all, the rest of the competitors in the 14 nm, both in the first generation of FinFET technology level. Simply put, Intel 14 at the beginning of the nano rolled out, from the point of view of a transistor performance, leading the entire generation of rivals.

In many on the depth of the chip evaluation agencies report, especially ChipWorks authority site, we can see that Intel 14 nanoscale transistors all performance indicators are ahead of other competitors. And, more importantly, ChipWorks through advanced transmission electron microscopy analysis found that Intel 14 nm chip transistor do fins spacing, most closely in this planet has the most advanced semiconductor technology, comprehensive leading foundries 14/16 of the nano.

So, question whether Intel in the transistor performance advantage competition behind the shut up. Why, the following samsung 14 details compared with Intel on the nano FinFET process transistor can understand. In the age of 22 nm, Intel transistors fins do not enough good, but 14 nm fins seem almost "vertical", make the fins higher, thinner, more easy to improve the drive current and the performance of the transistor.

The samsung of 14 nm transistor FinFET process details, please look for the, apparently more like 2011 Intel in the age of 22 nm process level, claims beyond the hard to avoid is a big mouth, anyway, after all, based on the first generation of FinFET build process.

Samsung 14 nm FinFET transistor detail:

Intel 14 nm process too much stronger than the TSMC But the leading edge

Of course, the performance by leaps and bounds, and Intel considered mobile applications and other competition, after all, in these areas do not need very high frequency of CPU. But when it comes to frequency, 14 nm manage more than 4 GHZ Intel will not exist any technical obstacles, and 14/16 of the foundries nano current is still quite difficult.

The contract has been in progress

Across chip manufacturing industry, there is no denying the fact that the progress of the contract, especially the samsung and TSMC is very large, and with Intel is being reduced to speed up the pace of technology gap, although Intel ahead for a long time, but the current gap needs to be more open.

We don't know whether Intel is lack of competitive pressure, but in the field of mobile, samsung 14 FinFET, TSMC 16 nano FinFET competition is unprecedentedly tragic of two process, from the partnership contract apple A9, to compete for each order, was very lively. What's more, two big contract are ready to deploy a new technological process of preparation, not just the second edition, also includes the third edition.

, for example, the first generation is the standard of 16 nm TSMC FinFET process, after the launch of the second generation FinFET Plus (FF +) enhanced version has been deployed. As for the next generation FinFET Compact (FFC), has completed the design research and development, and make sure this quarter can go into mass production, the rectified in advance.

Samsung side, the first generation of 14 nm is Low Power Eatly (LPE), is now the second generation of Low Power Plus (LPP) has started mass production, the key product of 820 and 8890 Exynos Snapdragon. Samsung executives claim, derived from the second generation of the next version of 14 nm will come out soon.

Longer-term plans, both samsung and TSMC have begun to work toward the aim of the 10 nanometers. TSMC said that 10 nanometers to trial production this year, formal mass production until the end of 2016, or the first quarter of 2017. As for samsung also provides probably the same circuit diagram, insisted that 10 nm can be mass production by the end of 2016, 2017 will appear on the phone and tablet.

In contrast, Intel, not only the desktop processor "Tick - Tock" strategy in two years ago has been broken, and the products based on nano technology in the first paragraph of the plan have to wait until the second half of 2017 to launch. Unless Intel reform development pattern, will lose technology leading position at the end of this year. As a giant in the field of semiconductor chips, Intel confident for a long time, but in the current competitive environment, also really make your move.