Samsung said on Wednesday, a leading independent industry use 10 nanometers fin type field-effect transistors (FinFET) process to produce an SRAM (static random access memory), means that the samsung may have 10 nai metric technology beyond TSMC (2330), even the wafer leading Intel (Intel) are samsung overtaking.

SRAM faster than DRAM, often regarded as the central processing unit (CPU) cache memory, in order to improve the efficiency of the CPU access. TSMC with Intel in an SRAM process technology is still stay in 16 and 14 nanometers, respectively.

Samsung successfully developed a new generation SRAM, also on behalf of its processors process technology advanced to 10 nanometers process is very well, estimates that is expected to get into full production in early 2017, will give it good position for the processor OEM orders. (ETnews.com)

Compared with 14 nanoscale SRAM, 10 nanometers to 128 MB memory unit storage area shrink 37.5%, with 10 nanometers to build processors, not only operation efficiency to speed up and take up the space is smaller. Samsung hope to the end of next year will be completed 10 nanometers commercialization.

The other, samsung NAND flash memory on the plane at the same time from 16 nanometers propulsion system technology to 14 nanometers, interest rates will reduce the production cost, improving the camp. Toshiba, meguiar's is still stay in 15 to 16 nai metric Cheng Jie section, and that this is the perfection of planar NAND memory process, after will develop towards the 3 d stack. But after a breakthrough from a samsung, perhaps plane NAND the possibility of further extension.