From now, 5 g is undoubtedly semiconductor manufacturers at a market, reviewing the development of mobile communication, each generation of mobile communication system can be defined iconic ability index and core key technologies:

1 g using frequency division multiple access (FDMA), can only provide analog voice business;

2 g mainly USES time division multiple access (TDMA), digital voice and low speed data service;

3 g in code division multiple access (CDMA) as the technical features, user peak rate of 2 Mbps to tens of megabits per second, can support multimedia data service;

4 g in orthogonal frequency division multiple access (OFDMA) technology as the core, the user peak rate of up to 100 MBPS to 1 GBPS, able to support a variety of mobile broadband data business.

Come to 5 g, its key ability generations of mobile communications more rich than before, the user experience rate, the density of the number of connections, end-to-end delay, peak rate and mobility will be 5 g key performance indicators (kpis).

Coupled with emerging Internet of things, such as mobile Internet application has a higher demand to 5 g, in 5 g devices also have further requirements. By qualcomm, senior project manager John Smee, 5 g of battery life, reliability, etc, has a higher demand.

, according to reports, according to market-research firm ReportsnReports 5 g network by 2025 generated $250 billion in annual revenue, and it is bound to give is to bring "struggling" semiconductor in recent months a new dawn.

Challenges and opportunities

Although the industry's looking forward to 5 g, but for 5 g network, it is facing many challenges. Although such as OEM and chip manufacturers are developing related 5 g products, but 5 g standard has not yet been determined, this is the first challenge.

Secondly, people know of the industry, and now the LTE network operating frequency range is 700 MHZ to 3.5 GHZ, but in the age of 5 g, in addition to the LTE will continue to exist, unauthorized millimeter wave frequency band (30 GHZ to 300 GHZ) will co-exist at the same time, in order to improve the capacity of wireless data. This will give the mobile system and the base station system processor, baseband and RF devices has brought more new demand. In RF chip suppliers, 5 g will bring an unprecedented new requirements, including the one called of millimeter wave phased array antenna technology.

This has been used in space and military gradually moved to the car radar, millimeter wave equipment 60 GHZ WIFI and coming 5 g. But this is not a simple migration, design and operation mode and even millimeter wave will bring new challenges to the manufacturer.

Not only the chip design will become very difficult, even in the test has also brought new challenges to the manufacturer.

In NI are mentioned in the article, because the wavelength of the millimeter wave is somewhere between 1 to 10 mm, in order to improve the utilization rate of spectrum and manufacturers, to explore the MIMO, interference from the physical coordinate technical methods, such as, it will bring high path loss, even in some frequency also faces the challenge of transmission loss of water vapor. In the dense urban environment channel measurement will find that the fusion can control the antenna beam direction and network topology of cellular system requires higher link budget. All of these will bring strong challenge test vendor.

Peter Gammel Skyworks's chief technology officer, also said that due to the high rate and low delay 5 g, it puts forward new requirements on compound semiconductor.

Specific to mobile phone, base station, testing and packaging, we can analysis like this:

(1) the base station

5 g, in the actual application with phased array antenna of mobile phone will launch signal to the base station and microcell base station, base station and microcell base station will dock with the phased array antenna to realize signal connection.

In order to achieve the above functions, there are still some problems to solve. For example, the weather can affect the signal path. "In millimeter wave band, caused by oxygen and absorb the path loss will be bigger," AnokiwaveCEO Robert Donahue said, "the solution is to use a beam forming technology."

Anokiwave one called "quad-core" 5 g IC, working frequency for 28 GHZ, have phased array function. This IC to use silicon germanium technology, can be used in micro cellular base station system, etc.

In theory, the chip can communicate with base station. With 4 G, 4.5 G and 5 G device must support a massive MIMO technology. Base station using rf LDMOS technology commonly used power tube, but now LDMOS technology is replaced by the gallium nitride (GaN) process. This is the first challenge for the semiconductor industry, and is also an opportunity.

"As well as the LTE - A 5 g infrastructure will be moved to the higher frequency to broaden the data bandwidth," steady overseas semiconductor DavidDanzilio said, senior vice President steady overseas services provide GaAs semiconductor and GaN technology. "With LTE towards a higher frequency, GaN technology has begun to expand market share."

"GaN is a kind of wide band gap materials," StrategyAnalytics Higham says, "that means GaN can tolerate a higher voltage, also means that GaN devices of power density and working temperature is higher. So, with GaAs and indium phosphide (InP) compared to the other high frequency technology such as GaN device output power is greater; and LDMOS and SiC (SiC) compared to the other power technology such as GaN frequency characteristic is better."

In the future, 5 g phones PA even GaN can also be used to manufacture. "GaN also can be used, especially in high frequency applications." Qorvo says SumitTomar, general manager of wireless infrastructure and products.

Military has begun in the cell phone use GaN devices, but ordinary smartphone use GaN devices have to wait for a period of time, because only in low power GaN technology, a breakthrough can GaN devices into the smartphone.

(2) the mobile phone

The inside of the 4 g mobile digital part includes application processor and a modem, rf front-end include power amplifier (PA), radio frequency signal source and the analog switch. Power amplifier is used to enlarge the phone rf signal, usually using gallium arsenide (GaAs) material heterojunction transistor (our HBT) technology.

The next 5 g mobile phones will have application processor and a modem. But unlike the 4 g system, 5 g phone phased array antenna is needed. Consists of a set of phased array antenna can be independent of the transmitting antenna, using beamforming technology, every phased antenna can be adjusted according to the beam direction.

May need to be 16 in 5 g smartphones with antenna. "Each antenna has independent PA and phase shifter, and work with a cover the entire frequency signal transceiver is linked together," Strategy Analytics analyst Chris Taylor said, "the ideal situation is to put the antenna on top signal transceiver, or with a transceiver to do together, so the signal transceiver to have multiple transmission channel is composed of a small PA. All the signals in and out of the antenna in the analog domain processing."

Millimeter wave components to design a system is very challenging. "A lot of customers are concerned not only with a system's architecture, also want to know what to use technology to the specific implementation," GlobalFoundries Rabbeni said, "how much depends on the system to be integrated functions, and how to divide the subsystem."

"In addition, the layout of the wiring for millimeter wave is very large, the influence of" Rabbeni said, "in close proximity between the parts to minimize wear and tear. Processing millimeter wave circuit is not an easy thing."

Phased array device is usually made from different process, but now most with a standard CMOS process and silicon germanium (SiGe) process. "In the millimeter wave phased array antenna/active application, silicon germanium technology has been proven." TowerJazz senior strategic marketing director Amol Kalburge said.

"In addition, silicon germanium materials can take advanced CMOS process and on-chip passive components integrated together, thus reducing the area of the system level chip (SoC) in order to improve the level of integration, and do better on the balance of cost and performance," Kalburge said, "we think silicon germanium materials will play a major role in 5 g rf IC, of course, would use the other 3-5 price materials."

Thus for the related rf manufacturer of silicon germanium and gallium arsenide products bring new challenges and is based on

(3) test

Test and measurement is about 5 g one of the most difficult part of the manufacturing process. Compared with the 4 g rf chip, millimeter wave has the obvious difference of test and measurement.

"Now, almost all of the rf chip test is done with a cable connect rf chip and test equipment," NI says Hall, "rf chip and test equipment is connected by cable to avoid test due to reasons such as path loss uncertainty."

But the rf chip in the test such as bluetooth, radiation measurement. Production test, chip makers will adopt the corresponding automatic test equipment (ATE) for the test.

Millimeter wave devices, however, test and measurement is quite another matter. Phased array antenna, for example, is likely to be binding on the rf front-end device. "(rf front-end device) encapsulated inside the antenna package," DE technology 5 g technical architect Mike Millhaem said, "so on the device without rf interface and terminal devices to connect to the test."

So, the traditional cable connection test method for millimeter wave do not apply. So, how to test the millimeter wave device?

Each manufacturer has different test plan, but need to put a few expensive machine together to complete test and measurement of millimeter wave.

This is a challenge.

(4) encapsulation

Military millimeter-wave products mostly adopts porcelain or metal packaging, the packaging reliability is very good, but the cost is very high.

So considering the civilian market QFN packages and multichip module, and other advanced packaging suitable for millimeter wave. "Manufacturers are in fan out and embedded packaging." Ase vice President Harrison said Chang.

In fact, on the millimeter wave chip packaging, packaging engineer must consider more factors, try more. "(millimeter wave) rf front end is much more complicated," Chang said, "we must ensure that the encapsulation structure, such as the attachment, pad plate (pad) and hole, and make it won't interfere with chip rf design."

Went before him

From the description above, we can see, 5 g to the whole industry chain has brought new challenges, some of the layout of the early companies will benefit from it. Processors, memory, display, power source, connectors, these companies will naturally get the benefit, but some are closely associated with 5 g of materials, manufacturing, packaging and radio frequency related manufacturers, benefit is obtained from 5 g or more. Say the first radio frequency.

From the current market situation analysis, the current global RF front end is dominated by overseas giant monopoly and market showed the trend of oligarchs. Such as in the field of filter, Japanese Murata, TDK, and Taiyo Yuden account for more than 85% SAW duplexer. BAW duplexer basic market monopolized by broadcom, broadcom occupy 87% of the market;

Power amplifier basic market by Skyworks, Qorvo, Broadcom three companies, three companies market share of 93%.

Antenna area market is relatively fragmented and domestic enterprises have to participate in the field: huawei global antenna market share of about 23% of the city, is the world's second largest antenna supplier. The world's biggest suppliers are Kathrein antennas, occupy the market share of 25% (only statistical base station antenna); PAmiDs integration module (including PA, duplexer and antenna switch), Skyworks, Qorvo, Broadcom three companies occupy 99% of the market.

As space is limited, we can't each analysis, from the most representative of the technology and the company are analyzed. Talk radio frequency (rf) this in the first place.

At present, the rf power amplifier in the main device adopts horizontal diffusion based on silicon metal oxide semiconductor (LDMOS) technology.

But silicon technology in the field of high frequency applications have limitations: LDMOS power amplifier bandwidth would be increased with the increase of frequency

Sharply reduce, LDMOS only in no more than 3.5 GHz frequency range.

As the communication frequency high frequency migration, base station and communication equipment needed to support the performance of high frequency power amplifier. Nowadays, GaN is

The only universal technology could meet these requirements: GaN power amplifier has to deal with more than 50 GHZ or mm

Wave frequency. In addition, GaN power amplifier for higher bandwidth, even at higher frequency. Although at present from

Ratio of consideration, LDMOS will still be the mainstream of the frequency spectrum, but in more than 10 GHZ frequencies, GaN

The advantage of very large. We think the 5 g era GaN power amplifier will become the first choice in the field of ultra high frequency communication, Qorvo is first cut into one of the manufacturers.

(1) Qorvo

As the world's well-known rf solutions provider, Qorvo layout is very advanced in 5 g. This embodies in GaAs device layout in the first place. Qorvo said, as a result of the application of millimeter wave. Demand for the new device has a strong, compared with the materials such as gallium arsenide and silicon, GaN in the demand for high frequency small basestation advantage is very obvious in 5 g, and 5 g will drive a lot of technical progress.

5 g evolution path

GaN has higher power density, will lead to small size, low power consumption and high efficiency etc advantages.

In addition to the base station, Qorvo also promote the popularity of GaN on the handheld device.

Qorvo, said GaN devices were first used in military radar and other military purposes, has been gradually into the commercial stations and cable television relay, and other fields, but the working voltage of these applications are basically a 28 v between 48 v. But we know the working voltage of mobile handheld devices are 2.7 to 5 v, in order to promote these GaN devices on a mobile phone application, Qorvo are using alternative materials, adaptation related voltage.

And Qorvo also introduced some GaN devices at present, to meet the application of 5 g. Including some of the high pressure of low frequency and high frequency components.

(2) the infineon

Introduce infineon before, first of all, in July this year, infineon to the price of $850 million will be wolfspeed and rf power into, including power silicon carbide substrate business application, radio frequency and the precious stone. This the GaN on SiC rf solution is a good supplement.

Before, according to infineon from belonging to the parent company Siemens ag, infineon has been the leader in mobile communications radio frequency devices. As early as in 2014, they realized the necessity of using LTE LNA and launched the first product. Infineon now is still the world's largest LNA suppliers.

In addition, infineon led the LTE rf front end and the performance of the antenna tuning optimization, and to provide customers the support of new architecture solutions and high quality. Looking forward to the future, we have become in the future to be the leader of the Pre - 5 g and 5 g application.

Infineon provide world-class SiGe: C technology, can make the LNA has low noise coefficient, high linearity and low power consumption; 130 nm RFCMOS technology makes rf switch small size and low insertion loss; Layer 2 wire frame encapsulation is suitable for complex systems, can provide the design flexibility; Committed to investing in innovative technology, has been applied in millimeter wave to take the lead.

Infineon related front-end products

(3) the NXP

NXP believes that in the process of evolution to 5 g, need higher frequency bandwidth, Si LDMOS is still in the leading position in the network, but after the heavy rain 3.5 GHZ, GaN and GaAs will become the main force, more parasitic effects will lead to higher integration needs; Multi-input multi-output (MIMO) and small cellular and leads to a lower transmission power needs, this requires a lower voltage; Smaller size of the PA packaging requirements and high level of integration; In the process also can produce the continuous growth of the signal bandwidth.

Layout and NXP will do.

(4) Skyworks

Of the technical scheme of Skyworks director Stephen Kovacic said, 5 g with previous standard difference, is that a new generation of standard, attracted the Intel and Google involved in the standards of the manufacturer. He thought the 5 g from popularity is still a long way to go. The industry around the definition of the air interface and communication link frequency uncertainty are discussed. He thought for mobile front, will face an unprecedented challenge, which will not be discussed at the system level.

He also thinks for the front-end, SiP encapsulation, will bring great benefits. He pointed out that based on GaAs our HBT

Manufacture of PA and SOI RF switch together is the best choice in the future. And SAW/FBAR filter, CMOS PA control also is right choice.

From the hardware, 5 g offered to all frequencies, so the scene on the performance of the rf devices (power, working frequency, reliability, etc.) have high requirements. With PA power added efficiency (PAE) as an example, the minimum requirement of 60%. Skyworks GaAs PA chips can achieve 78%, and the best silicon CMOS products can do only 57%.

The second is made.

TowerJazz senior strategic marketing director Amol Kalburge said, "in under 6 GHZ applications, the switch of SOI technology will continue to be the mainstream, but the application of SOI switch in the millimeter wave frequency research is not enough, it can play the role of and the possible problems remains to be seen. Beamforming antenna can support different transceiver channel, so may not need in millimeter wave antenna switch can realize two channel is completely isolated. If the millimeter-wave applications need analog switch, switch of SOI technology now due to their high insertion loss, very likely unavailable. SOI technology will give the deficiency of the MEMS technology switch or other new technology brings opportunity."

In addition, silicon germanium manufactured 8 inch wafer standard CMOS process, foundries continues to improve the performance of silicon germanium technology. GlobalFoundries, for example, recently launched 130 nm silicon germanium technology, its working frequency up to 340 GHZ, increased by 25% than the old process. In addition, the TowerJazz recently launched a 130 - nm silicon germanium technology.

In addition to the GaAs, the industry is also trying to other three price of materials to make a PA, such as silicon germanium. "Compared with manufacturing PA used by other processes, GaAs in aspects such as efficiency, linearity and frequency range has advantages," Strategy Analytics analyst Eric Higham says, "compared with silicon process, GaAs process disadvantage is that the cost is higher, is not easy to integrate."

Higham, said most GaAs foundry also USES 4 inch wafers to production, but in order to reduce costs, many manufacturers began to upgrade to 6 inches of production line.

At low frequencies, GaAs our HBT gate length is usually between 0.25 to 0.5 microns, the vendors will choose to do millimeter wave frequency, most of the device grid length from 0.1 to 0.15 micron technology, "said Higham," Qorvo introduced a GaAs technology of 90 nm, 90 nm is production of GaAs process limit size now."

This link for the testing and packaging, failed to find more relevant brochure, hope everyone to add.

Also includes but not limited to, qualcomm, broadcom, Avago, Intel, spreadtrum, mediatek, samsung, silicon products, moonlight, TowerJazz, is DE and NI, and semiconductor materials, manufacturing and packaging industry are all important player in the future 5 g, limited by space, and can't list one by one, who became one of the biggest beneficiaries you favorite?