Suzhou nano technology and nano bionic by researcher of Chinese academy of sciences Yang hui team on the silicon to develop the third generation of gallium nitride semiconductor laser, which is the first in the world can work continuously at room temperature silicon substrate of gallium nitride laser. Related research recently published in nature photonics.

Suzhou nano technology and nano bionic by researcher of Chinese academy of sciences Yang hui team on the silicon to develop the third generation of gallium nitride semiconductor laser, which is the first in the world can work continuously at room temperature silicon substrate of gallium nitride laser. Related research recently published in nature photonics.

With the rapid development of semiconductor science and technology, science and technology workers found based on the traditional technical route for data communication between the chip and system are increasingly difficult to meet the faster speed and higher complexity of the system of communication needs. The third generation of semiconductor gallium nitride in the field of LED light-emitting diodes (leds) and laser light emitting device has achieved extensive application, makes great contributions to human energy efficient lighting.

However, due to the thermal expansion coefficient of the third generation of semiconductor gallium nitride is about twice that of silicon on the silicon substrate temperature (1000 ℃) growth of sedimentary gallium nitride materials tend to rapidly shrink when cooling, silicon substrate outward pulling large tensile stress, thus gallium nitride materials in the process that commonly occur crack down to room temperature, the micro cracks and other defects seriously affect the quality of material and device performance.

Grown on the silicon substrate directly deposited high quality of the third generation of semiconductor gallium nitride materials, can not only with the help of a large size and low cost silicon wafer line and automation technology can greatly reduce the manufacturing cost of gallium nitride based devices, will also with silicon-based optoelectronic devices such as laser electronics system integration to provide a new technical route.

Researchers not only successfully suppressed because of gallium nitride material coefficient of thermal expansion mismatch between silicon and often causes cracking, and greatly reduce the defect density of the gallium nitride materials.