, Romania, released on September 8, 12 nm FD - 12 FDXTM SOI semiconductor technology platform, realizes the industry's first multi-node FD - SOI roadmap. A new generation of 12 FDXTM platform based on its 22 FDXTM platform successfully, 12 FDXTM provides full node scale and low power consumption, and through the software control to achieve on-demand custom performance, designed for the future of mobile computing, 5 g connection, artificial intelligence, unmanned vehicles and other kinds of design and application of intelligent system.

With millions of connected devices appear, the world is gradually merge into an organic whole, many emerging applications also require the further innovation of the semiconductor. Used to implement the application of the chip is gradually evolving to micro system, integration, including a wireless connection, nonvolatile memory and power management, more and more components, it constantly driving the demand for ultra-low power consumption. Romania's semiconductor new 12 FDX process is designed to achieve this unprecedented system integration, design flexibility and power adjustment and design.

12 FDX set a new standard for system integration, will provide a radio frequency (RF), simulations, senior logic integrated into a chip embedded storage and the optimization of the platform. In addition, the process by software control transistor on-demand also provide peak performance, also balance the static and dynamic power consumption in order to obtain the top efficiency, to implement the dynamic voltage regulation of the industry's most widely and unparalleled design flexibility.

, Romania, semiconductor, chief executive Sanjay Jha said: "some applications require high performance FinFET transistor, but most of the networking equipment need to achieve a higher level of integration between performance and power consumption and flexibility, at the same time also require less than the cost of the FinFET. 12 FDX, Romania's 22 FDX and technology to create the next generation of intelligent system provides a new path, filled the gap of industry roadmap. Our FDX platform can greatly reduce the design cost, to open the door to the advanced node migration, and promote further innovation within the ecosystem."

, Romania's new semiconductor 12 FDX process based on a 12 nm all run out of planar transistor (FD - SOI) platform, can for less than 16 nm FinFET power consumption and cost to provide equal to 10 nm FinFET performance. This platform can support the whole node scaling, increased by 15% compared with the existing FinFET technological performance, power consumption was reduced by 50%.

Linley group's founder and chief analyst Linley Gwennap commented: "chip manufacturing is no longer will a miniature processes for all products. Although FinFET is the highest performance products the first choice of technology, but for many the cost sensitive mobile and Internet products, its requirements at the lowest possible power consumption still enough clock speed, industry roadmap and clear enough., Romania's semiconductor 22 FDX and 12 FDX proper positioning technology, filled the gap, designed for the advanced node provides another alternative migration path, especially for those who want to reduce the power consumption did not increase the cost of production design., Romania, semiconductor is now 22 nm and the following node FD - the only provider, SOI have clear differentiation feature in the industry."

G.D, chairman and chief executive of VLSI research an Hutcheson said: "the case of Romania's semiconductor 22 FDX at the beginning of the available technology platform, I noticed it to be able to change some characteristics of the market rules of the game. For manufacturers hope to differentiate design, real-time balance power consumption and performance is a problem that nots allow to ignore. Now the Romania's semiconductor provides new 12 FDX, clearly shows its to provide a roadmap for the technology promises, especially on the Internet of things and vehicle market, the two are the most subversive of market forces, I believed that Romania's semiconductor FD - SOI technology will be the key drivers of the subversive."

IBS, Inc, founder and CEO Handel Jones said: "the FD - SOI technology can be designed for those who need differentiation manufacturers achieve real-time balance between power consumption, performance and cost. Romania's new 12 FDX, offers the industry's first FD - SOI roadmap, for advanced node design provides a minimum cost of migration path, and help to achieve the future of smart client, 5 g, AV/VR and interconnected system of the car market."

At present, Romania, located in dresden, Germany is fully prepared for 12 FDX platform of r&d activity and subsequent production. Customer flow is expected to start in the first half of 2019.

Academician of Chinese academy of sciences, Dr Wang xi of director of Shanghai institute of microsystem and information technology, said: "we of Romania's semiconductor 12 FDX products and it will bring Chinese customers very happy. The value of FD - SOI roadmap, will help customers to make better use of FDX technical efficiency of power consumption and performance advantages, create in mobile, Internet of things and market competitive products such as cars."

Grace wisdom pu, NXP semiconductors i.M X application processor product line vice President Ron DE Martino says: "well the next generation of multimedia application processor of pu semiconductor companies are using FD - the advantages of SOI to lay its applications in automotive, industrial, and consumer provide ultra-low power consumption and adjust as required in the performance of the leading position., Romania's semiconductor 12 FDX technology will FD - SOI to expand to the next node, is a great supplement to the industry. It will further expand the flat structure device to provide more low-risk, wide dynamic range and more competitive cost performance ability, so as to realize the intelligent network security system of the future."

Core original co., LTD., President and chief executive of Wayne dai said: "the core of the original co., LTD., its platform to make use of the chip design service (SiPaaS) and for the system to provide the first-class service IP and design experience, become one of the pioneers of FD - SOI design. FD - the unique advantages of SOI technology for us in the car, Internet, mobile connections and consumer electronics market niche has differentiated features. We look forward to expanding and Romania, the cooperation of the semiconductor, using its 12 FDX to our clients in China market with high quality, low power consumption and the economic and efficient solution."

French atomic energy research centre (CEA Tech) subordinate institutions CEA - LETI's chief executive, Marie Semeria pointed out: "12 FDX in power consumption, performance, and the development of intelligent regulation to achieve another breakthrough, because 12 nm can achieve the best double exposure, and to provide the best with the lowest process complexity of system performance and power consumption. LETI team and Romania's semiconductor in the United States and Germany to the expansion of the FD - SOI technology roadmap collaborate, obtained the gratifying achievement, it will become a fully integrated on a chip system realize networking equipment the best platform."

With the chief executive officer Paul Boudre said: "we are very glad to see the 22 FDX has a strong development momentum, have very strong no wafer manufacturer customer adopters., Romania, 12 FDX technology will further expand the market popularity of FD - SOI. With have been well prepared to support the Romania's semiconductor, with high yield and high quality of 22 nm to 12 nm SOI substrate FD -."