Global 200 mm pure foundries ©¤ huahong semiconductor announced that will make full use of the IGBT (insulated? Bipolar transistor) technology advantages, actively explore new energy automobile market, accelerate the new energy vehicles localization process.
Huahong semiconductor announced that it will make full use of in IGBT technology advantages, actively explore new energy automobile market...
IGBT is the core of a new generation of electric energy conversion and control devices, input impedance, less driving power and control circuit is simple, small switch loss, on and off the high speed, high working frequency, widely used in the new energy vehicles, industrial frequency conversion, smart grid, wind power and solar energy and other industries. Since commercial applications, the IGBT as a new type of power semiconductor devices of the main components, in 1 ~ 100 KHZ frequency has an important role within the scope of application, its scope of voltage 400 v to 6500 v, current range is 1 a ~ 3600 a.
Huahong semiconductor is provided by type (Field Stop, FS) contract IGBT production technology of 200 mm, 2011 mm in 2011 successful production on the production line of 1200 v not through (NPT, non - punch - through) IGBT; In 2013, the 600 v - 1200 - v FS IGBT to realize mass production, and focus on continuous development of more advanced FS IGBT. Innovation through continuous research and development, the company with several partners have launched a 600 v, 1200 v, 1700 v IGBT devices such as technology, a successful solution? The key technology of IGBT, including silicon buckling and on the back of the process ability, etc. In the future, will be to a higher level of voltage and larger current, new energy vehicles and extra-high voltage power electronic market, steady accounted for a seat in the global competition.
Huahong semiconductor wafer processing capacity on the back of the FS IGBT in particular, IGBT is to have a full set of processing technology on the back of a wafer foundry enterprise, including the back on the back of the chip, ion implantation, laser annealing, on the back of the metal on the back. After years of development, huahong semiconductor IGBT has accumulated rich manufacturing experience, the technical parameters of comparable with international leading enterprise, lay the huahong semiconductor IGBT in leading position in the manufacturing enterprise, at the same time actively promote the localization process of IGBT technology.
"Government work report of the state council in 2016" clearly put forward that "developing and popularizing is given priority to with electric car of new energy vehicles, speed up the construction of urban parking lots and charging infrastructure". The Chinese government "much starker choices-and graver consequences-in planning also has been clear about the implementation of the new energy automobile promotion plan, city buses and taxis are encouraged to use the new energy vehicles, new energy automotive industry future growth space is huge. It is understood that in 2010 China has become the world's largest car market, to 2020, the annual output will reach 2 million cars in China's new energy, the cumulative volume will be more than 5 million vehicles. The core module of pure electric vehicles leave the IGBT, especially the better performance of FS IGBT, electric vehicle charging infrastructure construction with the help of a lot of power component module, IGBT in the future the growth of the main driving force will come from hybrids and pure electric vehicles. As the core of electric power, the motor inverter will drive the rapid development IGBT module. Huahong semiconductor has a wealth of experience in automotive electronics, established a zero defect management mode, and through the ISO/TS16949 certification and several customers VDA 6.3 (German car quality process audit standard) audit, corporate customers of MOSFET and SJNFET (super junction MOSFET)? Products are successfully applied to automotive electronics field. Huahong semiconductor have excellent FS IGBT full set of processing capacity, on the back has absolute advantage in the field of wafer foundry, well prepared for the layout of new energy automobile market.
"Huahong semiconductor devices for the power of 200 mm wafer foundries, can provide low pressure to high pressure for green energy each link all voltage solution? Solution, and can customize according to customer needs a full range of all kinds of power device. At the same time companies are accelerating extra-high voltage 6500 v IGBT technology research and development strategic objectives also locked in high-end applications, industrial and energy markets continue its leaders' strategies' global power device." Huahong semiconductor, executive vice President Mr Fan Heng said: "huahong semiconductor will be based on the production side, hope the new energy vehicle development, provide advanced and reliable IGBT manufacturing services for the general customers, make more contributions for localization of IGBT chip."
