Injections of next generation memory semiconductor technology r&d investment of Samsung Electronics, Samsung Electronics) and Intel (Intel) to break the memory bandwidth (bandwith) the upper limit of the biggest issues, are on the hunt for their solution. Samsung focus on research and development of high frequency width memory (HBM) and next generation SRAM technology, Intel is developing embedded DRAM (eDRAM).

According to Digital Times reported, Intel expects 2017 to launch the next generation of chips Kaby Lake, will use 14 nano FinFET process, carrying the Skylake eDRAM 2 x 256 MB capacity growth. EDRAM is different from general DRAM, built into the CPU Die, improve the system Cache (Cache) play the role of capacity and speed.

Intel over the past three years within the CPU chip design experimental use eDRAM, now began to be Intel's core strategy. EDRAM past is mainly used in the graphics processor (GPU), launched in 2015, the sixth generation of Intel processors Skylake, equipped with eDRAM improve image processing efficiency.

South Korean semiconductor industry thinks, gm's sales DRAM samsung, SK Hynix (SK Hynix), of Intel's attempt to feel nervous. CPU and GPU leap year performance, storage performance progress is relatively slow.

By far the most common DDR DRAM specification module can exert the maximum bandwidth are theoretically 10 GBPS, can be mass production after 2018, in contrast, the processor has more than 100 GBPS level. South Korean semiconductor industry experts call this bottleneck between the processor and memory, and memory of the barrier.

Storage industry overlord samsung to solve the problem, is developing next generation memory. Samsung 2015 successfully developed 10 nm process SRAM, 2016 will raise an SRAM technology, will be 10 nm process DRAM to mass production stage. The SRAM than previously published samsung 14 nano SRAM, Cell area is reduced by 37.5%, there are improvements to the performance and power consumption.

At present only samsung semiconductor industry to produce HBM2 products, application scope is expanded. GPU carrying HBM products, such as hewlett-packard (HP), IBM recently integrated CPU and GPU architecture servo industry USES the processor increases, sales also climbed quickly.

Recently, the semiconductor industry to accelerate investment next generation memory technology, is the CPU and memory bottlenecks will eventually become a stumbling block to the IT market demand. For makers of memory, the future is the most important turning point in 2 ~ 3 years.